Drain current DLTS of normally-off AlGaN/GaN HEMTs

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 4, 2007, Pages 1536-1539

  Mizutani, T ^a   Kawano, A ^a   Kishimoto, S ^a   Maeazawa, K ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; COMPOUND SEMICONDUCTOR; DRAIN VOLTAGES; EXPERT EVALUATION; TRANSIENT BEHAVIORS;

ARSENIC COMPOUNDS; CHLORINE COMPOUNDS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; GALLIUM NITRIDE; TECHNOLOGY;

SEMICONDUCTOR MATERIALS;

EID: 49549085522     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674155     Document Type: Conference Paper

References (11)

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