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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1604-1608

Dopant activation in homoepitaxial MgZnO:P thin films

(7) Brandt, Matthias a Von Wenckstern, Holger a Meinecke, Christoph a Butz, Tilman a Hochmuth, Holger a Lorenz, Michael a Grundmann, Marius a

a UNIVERSITY OF LEIPZIG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; MAGNESIUM; OXYGEN; PARTIAL PRESSURE; PHOSPHORUS; POSITIVE IONS; PULSED LASER DEPOSITION; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE;

AS-GROWN FILMS; DEFECT FORMATION; DOPANT ACTIVATION; FILM COMPOSITION; FREE CARRIER CONCENTRATION; HALL EFFECT MEASUREMENT; HIGH RESOLUTION X RAY DIFFRACTION; HOMOEPITAXIAL; MGO CONTENT; ORDERS OF MAGNITUDE; OXYGEN PARTIAL PRESSURE; PSEUDOMORPHIC GROWTH; ZNO;

DEPOSITION;

EID: 70749161721 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3086657 Document Type: Conference Paper

Times cited : (10)

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