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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 6 A/B, 1999, Pages

Combinatorial laser molecular beam epitaxy (MBE) growth of Mg-Zn-O alloy for band gap engineering

(7) Matsumoto, Yuji a Murakami, Makoto a Jin, Zhengwu a Ohtomo, Akira a Lippmaa, Mikk a Kawasaki, M a Koinuma, Hideomi a,b

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTALLINE MATERIALS; ENERGY GAP; FILM GROWTH; LASER APPLICATIONS; MASKS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SYNTHESIS (CHEMICAL); ZINC OXIDE;

COMBINATORIAL CHEMISTRY; COMBINATORIAL SHADOW MASKS;

SEMICONDUCTING FILMS;

EID: 0032659122 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.l603 Document Type: Article

Times cited : (198)

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