Role of the substitutional oxygen donor in the residual n-type conductivity in GaN

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Chen, W M ^a   Buyanova, I A ^a   Wagner, Mt ^a   Monemar, B ^a   Lindstrom J L ^b   Amano, H ^c   Akasaki, I ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

^c MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MORPHOLOGY; SILICA;

DISLOCATION DENSITY; GROWTH TEMPERATURES;

SEMICONDUCTING FILMS;

EID: 3442878234     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002970     Document Type: Conference Paper

References (6)

1. J. Neugebauer, C. G. Van de Walle, "Atomic geometry and electronic structure of native defects in GaN", Phys. Rev. B 50 (11), 8067 (1994).
2. Jörg Neugebauer and Chris G. Van de Walle, "Gallium vacancies and the yellow luminescence in GaN", Appl. Phys. Lett. 69 (4), 503 (1996).
3. G. Wetzel, T. Suski, J. W. Ager, E. R. Weber, E. E. Haller, S. Fischer, E. K. Meyer, R. J. Molnar, P. Perlin, "Pressure induced deep gap state of oxygen in GaN", Phys. Rev. Lett. 78 (20), 3923 (1997).
4. M. Linde, S. F. Uftring, G. D. Watkins, V. Härte and F. Scholz, "Optical detection of magnetic resonance in electron-irradiated GaN", Phys. Rev. B55, R10177 (1997).
5. For a review, see e.g. P.J. Dean "Oxygen in GaP" in "Deep Centers in Semiconductors" ed. S.T. Pantelides (Gordon and Breach Science Pub. New York, 1986) p.185 ; P.J. Dean and C.H. Henry, Phys. Rev. 176, 928 (1968).
6. For a review, see e.g. P.J. Dean "Oxygen in GaP" in "Deep Centers in Semiconductors" ed. S.T. Pantelides (Gordon and Breach Science Pub. New York, 1986) p.185 ; P.J. Dean and C.H. Henry, Phys. Rev. 176, 928 (1968).