On the ammonolysis of Ga2O3: An XRD, neutron diffraction and XAS investigation of the oxygen-rich part of the system Ga2O3-GaN

Journal of Solid State Chemistry

Volumn 183, Issue 3, 2010, Pages 532-541

  Roehrens, D ^a   Brendt, J ^a   Samuelis, D ^a   Martin, M ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Ga2O3; Ammonolysis; GaN; Nitrogen solubility; Oxynitrides

Indexed keywords

AMMONOLYSIS; DETECTION LIMITS; ELEVATED TEMPERATURE; EX SITU; IN-SITU; LATTICE PARAMETERS; LINEAR COMBINATIONS; NITROGEN SOLUBILITY; OXYNITRIDES; SUB-LATTICES; WURTZITES; X-RAY ABSORPTION SPECTRUM; XRD;

ABSORPTION; GALLIUM ALLOYS; GALLIUM NITRIDE; HOLOGRAPHIC INTERFEROMETRY; NEUTRON DIFFRACTION; NITROGEN; OXYGEN; RIETVELD METHOD; RIETVELD REFINEMENT; SOLUBILITY; TERNARY SYSTEMS; X RAY ABSORPTION; X RAY DIFFRACTION; ZINC SULFIDE;

ABSORPTION SPECTROSCOPY;

EID: 77649193167     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2009.12.024     Document Type: Article

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