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Volumn 80, Issue 8, 1997, Pages 2121-2125

Evidence for a phase transition of β-gallium oxide at very low oxygen pressures

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY OF SOLIDS; OXYGEN; PARTIAL PRESSURE SENSORS; PHASE EQUILIBRIA; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; THIN FILMS;

EID: 0031197322     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1997.tb03096.x     Document Type: Article
Times cited : (27)

References (11)
  • 2
    • 84919224220 scopus 로고
    • Ph.D. Thesis. Technische Universität Munich, Munich, FRG
    • 3-Dünnschichten"; Ph.D. Thesis. Technische Universität Munich, Munich, FRG, 1992.
    • (1992) 3-Dünnschichten
    • Fleischer, M.1
  • 8
    • 0003438120 scopus 로고    scopus 로고
    • Joint Committee on Powder Diffraction Standards, Swarthmore, PA (now International Centre for Diffraction Data (ICDD), Newtowne Square, PA)
    • JCPDS Powder Diffraction File, Joint Committee on Powder Diffraction Standards, Swarthmore, PA (now International Centre for Diffraction Data (ICDD), Newtowne Square, PA).
    • JCPDS Powder Diffraction File
  • 11
    • 0025488482 scopus 로고
    • Stability of Semiconducting Gallium Oxide Thin Films
    • M. Fleischer, W. Hanrieder, and H. Meixner, "Stability of Semiconducting Gallium Oxide Thin Films," Thin Solid Films, 190, 93-102 (1990).
    • (1990) Thin Solid Films , vol.190 , pp. 93-102
    • Fleischer, M.1    Hanrieder, W.2    Meixner, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.