Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 731-737

  Sun, Chi Kuang ^a,b,d,e,f   Keller, Stacia ^c,g   Chiu, Tien Lung ^b,h   Wang, Gary ^c,i,j   Minsky, Milan S ^c,e   Bowers, John E ^a,c   DenBaars, S P ^c  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c University of California   (United States)

^d HARVARD UNIVERSITY   (United States)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f NSF Ctr Quantized Electronics S   (Taiwan)

^g UNIVERSITY OF LEIPZIG   (Germany)

^h NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

ⁱ UNIVERSITY OF CALIFORNIA   (United States)

^j HEWLETT PACKARD COMPANY   (United States)

more..

Author keywords

Carrier lifetime; Excitons; Gallium nitride; Quantum wells; Time resolved photoluminescence

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; EPITAXIAL GROWTH; EXCITONS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

TIME RESOLVED PHOTOLUMINESCENCE (PL) TECHNIQUES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031153664     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640628     Document Type: Article

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