Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 731-737

  Sun, Chi Kuang ^a,b,d,e,f   Keller, Stacia ^c,g   Chiu, Tien Lung ^b,h   Wang, Gary ^c,i,j   Minsky, Milan S ^c,e   Bowers, John E ^a,c   DenBaars, S P ^c  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c University of California at Santa Barbara   (United States)

^d HARVARD UNIVERSITY   (United States)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f NSF Ctr Quantized Electronics S   (Taiwan)

^g UNIVERSITY OF LEIPZIG   (Germany)

^h NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

ⁱ UNIVERSITY OF CALIFORNIA   (United States)

^j HEWLETT PACKARD COMPANY   (United States)

more..

Author keywords

Carrier lifetime; Excitons; Gallium nitride; Quantum wells; Time resolved photoluminescence

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; EPITAXIAL GROWTH; EXCITONS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

TIME RESOLVED PHOTOLUMINESCENCE (PL) TECHNIQUES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031153664     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640628     Document Type: Article

References (30)

1. N. Yoshimoto, T. Matsuoka, T. Sasaki, and A. Katsui, "Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 59, pp. 2251-2253, 1991.
2. N. Nakamura, T. Mukai, and M. Senoh, "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes," Appl. Phys. Lett., vol. 64, pp. 1687-1689, 1994.
3. H. Amano, T. Tanaka, Y. Kunii, K. Kato, S. T. Kim, and I. Akasaki, "Room temperature violet stimulated emission from optically pumped Al/GaN/GaInN double heterostructure," Appl. Phys. Lett., vol. 64, pp. 1377-1379, 1994.
4. n layered structures and reduction of indium droplets," J. Cryst. Growth, vol. 145, pp. 209-213, 1994.
5. K. S. Boutros, F. G. McIntosh, J. C. Roberts, S. M. Bedair, E. L. Piner, and N. A. El-Masry, "High quality InGaN film by atomic layer epitaxy," Appl. Phys. Lett., vol. 67, pp. 1856-1858, 1995.
6. 1-xN on GaAs," Appl. Phys. Lett., vol. 66, 1632-1634, 1995.
7. S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, and S. P. DenBaars, "Growth and characterization of bulk InGaN films and quantum wells," Appl. Phys. Lett., vol. 68, pp. 3147-3149, 1996.
8. S. Nakamura, M. Senoh, N. Iwasa, and S.-I. Nagahuma, "High brightness InGaN blue, green, and yellow light-emitting diodes with quantum well structures," Jpn. J. Appl. Phys., vol. 34, pp. L797-L799, 1995.
9. _, "High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes," Appl. Phys. Lett., vol. 67, pp. 1868-1870, 1995.
10. S. Nakamura, M. Senoh, S. Magahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, "Room-temperature contineous-wave operation of InGaN mulli-quantum-well-structure laser diodes with a long lifetime," Appl. Phys. Lett., vol. 70, pp. 868-870, 1997.
11. C.-K. Sun, S. Keller, G. Wang, M. S. Minsky, J. E. Bowers, and S. P. DenBaars, "Radiative recombination measurements of InGaN single quantum well," Appl. Phys. Lett., vol. 69, pp. 1936-1938, 1996.
12. E. S. Jeon, V. Kozlov, Y.-K. Song, A. Vertikov, M. Kuball, A. V. Nurmikko, H. Liu, C. Chen, R. S. Kern, C. P. Kuo, and M. G. Craford, "Recombination dynamics in InGaN quantum wells," Appl. Phys. Lett., vol. 69, pp. 4194-4196, 1996.
13. (1-x) N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes," Microelectron. J., vol. 25, pp. 651-659, 1994.
14. K. Osamura, K. Nakajima, and Y. Murakami, "Fundamental absorption edge in GaN, InN, and their alloys," Solid State Commun., vol. 11, pp. 617-621, 1972.
15. W. Pickin and J. P. R. David, "Carrier decay in GaAs quantum wells," Appl. Phys. Lett., vol. 56, pp. 268-270, 1990.
16. 1-xAs quantum-well structures," Phys. Rev. B, vol. 44, pp. 3115-3124, 1991.
17. W. Shockley and W. T. Read, Jr., "Statistics of the recombinations of holes and electros," Phys. Rev., vol. 87, pp. 835-843, 1952.
18. S. L. Chuang, Physics of Optoelectronics Devices. New York: Wiley-Interscience, 1995.
19. S. Strite and H. Morkoç, "GaN, AlN, and InN: A review," J. Vac. Sci. Technol. B, vol. 10, pp. 1237-1266, 1992.
20. xN thin films," J. Appl. Phys., vol. 46. pp. 3432-3437, 1975.
21. T. L. Tansley and C. P. Foley, "Optical band gap of indium nitride," J. Appl. Phys., vol. 59, pp. 3241-3244, 1986.
22. C. Reese, E. Yablonovitch, S. Keller, B. Keller, and S. P. DenBaars, "Absolute internal quantum efficiency of an InGaN/GaN quantum well," presented at CLEO'96, Anaheim, CA, 1996, paper CThU1.
23. C. Reese, private communication.
24. B. K. Ridley, "Kinetics of radiative recombination in quantum wells," Phys. Rev. B, vol. 41, pp. 12190-12196, 1990.
25. 1-xAs quantum wells," Phys. Rev. B, vol. 43, pp. 4765-4770, 1991.
26. Y. Kawakami, Z. G. Peng, Y. Nakukawa, S. Fujita, S. Fujita, and S. Nakamura, "Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer," Appl. Phys. Lett., vol. 69, pp. 1414-1416, 1996.
27. 1-x," Phys. Rev. B, vol. 25, pp. 3828-3840, 1982.
28. J. Feldmann, G. Peter, E. Göbel, P. Dawson, K. Moore, C. Foxon, and R. J. Elliott, "Linewidth dependence of radiative exciton lifetimes in quantum wells," Phys. Rev. Lett., vol. 59, pp. 2337-2340, 1987.
29. J. M. Morison and D. C. Herbert, "Oscillator strength for excitons in quantum wells: Free and bound to impurities," Superlattices and Microstructures, vol. 1, pp. 423-426, 1985.
30. T. Takagahara and E. Hanamura, "Giant-oscillator-strength effect on exciton optical nonlinearities due to localization," Phys. Pev. Lett., vol. 56, pp. 2533-2536, 1986.