Visible photoluminescence of Ge dots embedded in Si/SiO2 matrices

Applied Physics Letters

Volumn 80, Issue 8, 2002, Pages 1432-1434

  Shklyaev, Alexander A ^a   Ichikawa, Masakazu ^a,b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GE DOTS; GE ISLAND; HIGH DOT DENSITY; HOLE MIGRATION; MULTILAYER STRUCTURES; RADIATIVE DEFECTS; SPACER LAYER; ULTRA-THIN; VISIBLE PHOTOLUMINESCENCE;

MULTILAYER FILMS; MULTILAYERS; PHOTOLUMINESCENCE; SILICON COMPOUNDS; ULTRATHIN FILMS;

GERMANIUM;

EID: 79956020860     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1451986     Document Type: Article

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