Strain effect on photoluminescence from InGaN/GaN and InGaN/AIGaN MQWs

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue SUPPL., 2006, Pages 20-24

  Yu, Tongjun ^a   Kang, Xiangning ^a   Qin, Zhixin ^a   Chen, Zhizhong ^a   Yang, Zhijian ^a   Hu, Xiaodong ^a   Zhang, Guoyi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

AlGaN; InGaN; MQWs; Photoluminescence; Strain

Indexed keywords

ANNEALING; COMPRESSIVE STRESS; GALLIUM NITRIDE; PHOTOLUMINESCENCE; RAMAN SCATTERING; STRAIN; X RAY DIFFRACTION ANALYSIS;

ALGAN; INGAN; RAMAN SPECTRA;

SEMICONDUCTOR MATERIALS;

EID: 33847780921     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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