Multiple peak spectra from InGaN/GaN multiple quantum wells

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 85-89

  Pozina, G ^a   Bergman, J P ^a   Monemar, B ^a   Takeuchi, T ^b   Amano, H ^b   Akasaki, I ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); EXCITONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITY; GALLIUM NITRIDE MULTI QUANTUM WELLS; INDIUM GALLIUM NITRIDE MULTI QUANTUM WELLS; MULTIPLE PEAK PHOTOLUMINESCENCE SPECTRA; QUANTUM WELL BAND GAP;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034228611     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<85::AID-PSSA85>3.0.CO;2-Y     Document Type: Article

References (8)

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