Parameter space exploration for robust and high-performance n-channel and p-channel symmetric double-gate FinFETs

2009 1st Asia Symposium on Quality Electronic Design, ASQED 2009

Volumn , Issue , 2009, Pages 246-251

  Tawfik, Sherif A ^a   Kursun, Volkan ^b  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PARAMETERS; DOUBLE-GATE; ELECTRICAL CHARACTERISTIC; FIN THICKNESS; FINFETS; GATE LENGTH; GATE OXIDE; N-CHANNEL; ON-CURRENTS; PARAMETER SPACES; ROOM TEMPERATURE; SUBTHRESHOLD;

FINS (HEAT EXCHANGE); SPACE RESEARCH;

LEAKAGE CURRENTS;

EID: 70449510191     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASQED.2009.5206260     Document Type: Conference Paper

References (13)

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