Portfolio of FinFET memories: Innovative techniques for an emerging technology

2008 International SoC Design Conference, ISOCC 2008

Volumn 1, Issue , 2008, Pages

  Tawfik, Sherif A ^a   Kursun, Volkan ^b  

^a University of Wisconsin Madison   (United States)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DATA ACCESS; EMERGING TECHNOLOGIES; FINFET MEMORY; IDLE MODE; LEAKAGE POWER CONSUMPTION; LOW THRESHOLDS; MEMORY CIRCUITS; READ STABILITY; SRAM CELL; WRITE OPERATIONS;

CELL MEMBRANES; ELECTRIC POWER UTILIZATION; FIELD EFFECT TRANSISTORS; PROGRAMMABLE LOGIC CONTROLLERS; STABILITY; STATIC RANDOM ACCESS STORAGE;

CYTOLOGY;

EID: 69949106802     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOCDC.2008.4815583     Document Type: Conference Paper

References (12)

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3. Y. Liu et al., "Cointegration of High-Performance Tied-Gate Three- Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs with Asymmetric Gate-Oxide Thicknesses," IEEE Electron Device Letters, Vol.28, No. 6, pp. 517-519, June 2007. (Pubitemid 46846010)
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7. S. A. Tawfik and V. Kursun, "Compact FinFET Memory Circuits with P-Type Data Access Transistors for Low Leakage and Robust Operation," Proceedings of the IEEE/ACM International Symposium on Quality Electronic Design, pp. 855-860, March 2008.
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9. Medici Device Simulator, Synopsys, Inc., 2006.
10. S. A. Tawfik and V. Kursun, "Work-Function Engineering for Reduced Power and Higher Integration Density: An Alternative to Sizing for Stability in FinFET Memory Circuits," Proceedings of the IEEE International Symposium on Circuits and Systems, pp.788-791, May 2008.
11. P. Ranade et al., "Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation," Electrochemical and Solid-State Letters, Vol.4, Issue 11, pp. G85-G87, November 2001.
12. J. Kedzierski et al., "Metal-gate FinFET and Fully-Depleted SOI Devices Using Total Gate Silicidation," Proceedings of the IEEE Electron Devices Meeting, pp. 247-250, December 2002.