Effect of layer-by-layer electrostatic assemblies on the surface potential and current voltage characteristic of metal-insulator-semiconductor structures

Langmuir

Volumn 25, Issue 21, 2009, Pages 12529-12534

  Gorin, D A ^a,b   Yashchenok, A M ^a,b   Manturov, A O ^c   Kolesnikova, T A ^b   Mohwald H ^a  

^a MAX PLANCK INSTITUTE OF COLLOIDS AND INTERFACES   (Germany)

^b SARATOV STATE UNIVERSITY   (Russian Federation)

^c SARATOV STATE TECHNICAL UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC ASSEMBLY; KELVIN PROBE METHOD; LAYER-BY-LAYERS; MAJORITY CARRIERS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; MIS STRUCTURE; MONOLAYER FORMATION; POLYELECTROLYTE ADSORPTION; POLYELECTROLYTE LAYERS; POLYELECTROLYTE MULTILAYER COATINGS; POLYETHYLENIMINES; RESISTANCE CHANGE; RESISTANCE INCREASE; SEMI-CONDUCTOR SURFACES; SILICON PLATES; SURFACE POTENTIAL MEASUREMENTS;

ADSORPTION; CURRENT VOLTAGE CHARACTERISTICS; INSULATION; METAL INSULATOR BOUNDARIES; MIS DEVICES; MONOLAYERS; PHOTOOXIDATION; PLATES (STRUCTURAL COMPONENTS); POLYELECTROLYTES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SURFACE POTENTIAL; SURFACE PROPERTIES; SWITCHING CIRCUITS;

SURFACE RESISTANCE;

ARTICLE; SEMICONDUCTOR; STATIC ELECTRICITY;

SEMICONDUCTORS; STATIC ELECTRICITY;

EID: 70449381003     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la901379d     Document Type: Article

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