Comparison of electromigration behaviors of SnAg and SnCu solders

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 149-154

  Lu, Minhua ^a   Shih, Da Yuan ^a   Goldsmith, Charles ^b   Wassick, Thomas ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Activation energy; Black's law; Blech limit; Component; Diffusion; Electromigration; Pb free solder

Indexed keywords

BLACK'S LAW; BLECH EFFECT; BLECH LIMIT; COMPONENT; EFFECTIVE ACTIVATION ENERGY; ELECTROMIGRATION BEHAVIOR; FAILURE MECHANISM; GRAIN ORIENTATION; INTERSTITIAL DIFFUSION; PB FREE SOLDERS; PB-FREE SOLDER; SELF-DIFFUSION; SN-AG SOLDER; SN-CU SOLDERS;

ACTIVATION ENERGY; DIFFUSION; ELECTROMIGRATION; LEAD; RELIABILITY; SILVER; SOLDERING ALLOYS;

TIN;

EID: 70449380711     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173241     Document Type: Conference Paper

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