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Volumn 98, Issue 1, 2005, Pages

Study of electromigration in thin tin film using edge displacement method

Author keywords

[No Author keywords available]

Indexed keywords

ATOM FLUX; EDGE DISPLACEMENT; INTERMEDIATE COMPOUNDS; THRESHOLD CURRENT DENSITY;

EID: 22944441624     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1954871     Document Type: Article
Times cited : (17)

References (19)
  • 3
    • 0004245602 scopus 로고    scopus 로고
    • Semiconductor Industry Association, San Jose
    • International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, 2003); see website http://public.itrs.net/.
    • (2003) International Technology Roadmap for Semiconductors


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.