Preparation of HfO 2 nano-films by atomic layer deposition using HfCl 4 and O 2 under atmospheric pressure

Solid State Sciences

Volumn 6, Issue 11, 2004, Pages 1217-1219

  Nonobe, Shinichi ^a   Takahashi, Naoyuki ^a   Nakamura, Takato ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Atmospheric pressure; HfO 2; Nano film; Permittivity value; Self limiting growth

Indexed keywords

ATOMIC LAYER DEPOSITION; HFO; NANO-FILMS;

ATMOSPHERIC PRESSURE; GROWTH (MATERIALS); NANOSTRUCTURED MATERIALS; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; X RAY DIFFRACTION ANALYSIS;

HAFNIUM COMPOUNDS;

ARTICLE; ATMOSPHERIC PRESSURE; ATOM; BIOACCUMULATION; BIOFILM; CONCENTRATION PROCESS; HIGH TEMPERATURE; NANOPARTICLE; NANOTECHNOLOGY; PROCESS DEVELOPMENT; TEMPERATURE DEPENDENCE; X RAY DIFFRACTION;

EID: 7044234857     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2004.07.030     Document Type: Article

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