Self-limiting growth of ZrO2 films on a Si(100) substrate using ZrCl4 and O2 under atmospheric pressure

Journal of Electronic Materials

Volumn 32, Issue 10, 2003, Pages 1107-1110

  Takahashi, Naoyuki ^a   Yoshii, Naoki ^a   Nonobe, Shinichi ^a   Nakamura, Takato ^a   Yoshioka, Masayuki ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b SIRISP   (Japan)

Author keywords

AP ALD; Atmospheric pressure; Self limiting growth; Thin film; ZrO2

Indexed keywords

CHLORINE COMPOUNDS; DEPOSITION; FILM GROWTH; OXYGEN; PARTIAL PRESSURE; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS; ZIRCONIA;

ATOMIC LAYER DEPOSITION; POLYCRYSTALLINE PHASE; SELF-LIMITING GROWTH; ZIRCONIA FILM;

THIN FILMS;

EID: 0242273200     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0095-1     Document Type: Article

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