Atmospheric pressure atomic layer epitaxy of ZnO on a sapphire (0001) substrate by alternate reaction of ZnCl2 and O2

Journal of Materials Science Letters

Volumn 19, Issue 23, 2000, Pages 2089-2090

  Kaiya, K ^a   Yoshii, N ^a   Takahashi, N ^a   Nakamura, T ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041725098     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1026745903387     Document Type: Article

References (4)

1. T. SUNTLA and J. ANTSON, Finland Patent No. 52359 (1974).
2. L. NIINISTO, M. RITALA and M. LESKELA, Met. Sci. and Eng. B41 (1996) 23.
3. M. RITALA, Appl. Suf. Sci. 112 (1997) 223.
4. JCPDS File No. 36-1451 (1990).