Statistical noise analysis of CMOS image sensors in dark condition

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2481-2488

  Woo, Jun Myung ^a   Park, Hong Hyun ^a,b   Hong, Sung Min ^c   Chung, In Young ^d   Min, Hong Shick ^a   Park, Young June ^a  

^a Seoul National University   (South Korea)

^b PURDUE UNIVERSITY   (United States)

^c BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^d Kwangwoon University   (South Korea)

Author keywords

CMOS image sensor (CIS); Random telegraph signal (RTS) noise; Semiconductor device modeling; Statistical simulation

Indexed keywords

CHANNEL LENGTH; CHANNEL WIDTHS; CMOS IMAGE SENSOR; CMOS IMAGE SENSOR (CIS); CORRELATED DOUBLE SAMPLING; DARK CONDITIONS; DRIFT-DIFFUSION MODEL; GREEN'S FUNCTION METHODS; MOS-FET; NUMERICAL EFFICIENCY; OXIDE TRAP DENSITY; OXIDE TRAPS; RANDOM DISTRIBUTION; RANDOM TELEGRAPH SIGNAL (RTS) NOISE; RANDOM TELEGRAPH SIGNAL NOISE; SEMICONDUCTOR DEVICE MODELING; SOURCE FOLLOWERS; STATISTICAL ANALYSIS; STATISTICAL NOISE; STATISTICAL SIMULATION; TECHNOLOGY COMPUTER AIDED DESIGN;

COMPUTER AIDED ANALYSIS; COMPUTER AIDED DESIGN; DIGITAL CAMERAS; DIGITAL IMAGE STORAGE; GREEN'S FUNCTION; MOSFET DEVICES; PIXELS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SIMULATORS; SOLID-STATE SENSORS; STATISTICAL METHODS; TELEGRAPH; THREE DIMENSIONAL;

IMAGE SENSORS;

EID: 70350724395     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030981     Document Type: Article

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