Chemical state and atomic structure of Ge2Sb2Te 5 system for nonvolatile phase-change random access memory

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Jung, Min Cherl ^a   Kim, Ki Hong ^b   Lee, Young Mi ^a   Eom, Jae Hyeon ^c   Im, Jino ^c   Yoon, Young Gui ^d   Ihm, Jisoon ^c   Song, Se Ahn ^b   Jeong, Hong Sik ^e   Shin, Hyun Joon ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Seoul National University   (South Korea)

^d Chung Ang University   (South Korea)

^e SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; BINDING ENERGY; GERMANIUM; METASTABLE PHASES; PHOTOELECTRON SPECTROSCOPY; RANDOM ACCESS STORAGE; SEMICONDUCTING GERMANIUM COMPOUNDS; TELLURIUM COMPOUNDS; THICK FILMS; THREE DIMENSIONAL; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS; AMORPHOUS STATES; ATOMIC STRUCTURES; BUILDING BLOCKS; CHANGE MECHANISMS; CHEMICAL STATE INFORMATIONS; CHEMICAL STATES; CLUSTER MODELS; CORE LEVELS; FILM USING; HIGH-RESOLUTION; METASTABLE; METASTABLE STATES; NONVOLATILE; ORBIT SPLITTING; RANDOM ACCESSES; TWO COMPONENTS; VALANCE BAND SPECTRUM; X-RAY PHOTOELECTRON SPECTROSCOPIES;

PHASE CHANGE MEMORY;

EID: 54049107309     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2990766     Document Type: Article

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