Degenerate layer at ZnO/sapphire interface

Journal of Physics D: Applied Physics

Volumn 42, Issue 19, 2009, Pages

  Li, L ^a,b   Shan, C X ^a   Wang, S P ^a,b   Li, B H ^a   Zhang, J Y ^a   Yao, B ^a   Shen, D Z ^a   Fan, X W ^a   Lu, Y M ^c  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SHENZHEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MODELS; ELECTRON CONCENTRATION; HALL MEASUREMENTS; SAPPHIRE SUBSTRATES; TEMPERATURE DEPENDENT; TWO LAYERS; ZNO; ZNO FILMS;

ACTIVATION ENERGY; CONCENTRATION (PROCESS); CORUNDUM; CRYSTAL GROWTH; ELECTRONS; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OXIDE FILMS; SEMICONDUCTING ZINC COMPOUNDS; ZINC;

ZINC OXIDE;

EID: 70350654207     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/19/195403     Document Type: Article

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