Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition

Journal of Alloys and Compounds

Volumn 487, Issue 1-2, 2009, Pages 400-403

  Zhao, D G ^a   Jiang, D S ^a   Zhu, J J ^a   Guo, X ^a   Liu, Z S ^a   Zhang, S M ^a   Wang, Y T ^a   Yang, Hui ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

Crystal growth; Nitride materials; X ray diffraction

Indexed keywords

DEFECT EVOLUTION; DISLOCATION DENSITIES; DISLOCATION REDUCTION; ELECTRICAL PROPERTY; GAN FILM; GAN GROWTH; GROWTH PROCESS; GROWTH TIME; METALORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDE MATERIALS; SCATTERING CENTERS;

CARRIER CONCENTRATION; COALESCENCE; CRYSTAL GROWTH; CRYSTALLIZATION; DEFECTS; DIFFRACTION; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALLIUM NITRIDE; GRAIN BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POINT DEFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 70350618912     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.07.147     Document Type: Article

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