Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition

Applied Surface Science

Volumn 253, Issue 5, 2006, Pages 2452-2455

  Zhao, D G ^a   Liu, Z S ^a   Zhu, J J ^a   Zhang, S M ^a   Jiang, D S ^a   Yang, Hui ^a   Liang, J W ^a   Li, X Y ^b   Gong, H M ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Al incorporation; AlGaN; MOCVD

Indexed keywords

ALUMINUM; BOND STRENGTH (CHEMICAL); FLUXES; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION;

CRYSTAL QUALITY; SURFACE MOBILITY; TRIMETHYLALLUMINUM (TMAL) FLUXES;

ALUMINUM COMPOUNDS;

EID: 33751393220     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.04.062     Document Type: Article

References (13)

1. Mihopoulos T.G., Gupta V., and Jensen K.F. J. Cryst. Growth 195 (1998) 733
2. Makino O., Nakamura K., Tachibana A., Tokunaga H., Akustu N., and Matsumoto K. Appl. Surf. Sci. 159-160 (2000) 374
3. Zhao D.G., Zhu J.J., Liu Z.S., Zhang S.M., Yang H., and Jiang D.S. Appl. Phys. Lett. 85 (2004) 1499
4. Han J., Ng T.B., Biefeld R.M., Crawford M.H., and Follstaedt D.M. Appl. Phys. Lett. 71 (1997) 3114
5. Shih C.F., Keh M.Y., Wang Y.N., Chen N.C., Chang C.-A., Chang P.H., and Liu K.S. J. Cryst. Growth 277 (2005) 44
6. Kim S., Oh J., Kang J., Kim D., Won J., Kim J.W., and Cho H. J. Cryst. Growth 262 (2004) 7
7. Heinke H., Kirchner V., Einfeldt S., and Hommel D. Appl. Phys. Lett. 77 (2000) 2145
8. Shih C.F., Chen N.C., Lin S.Y., and Liu K.S. Appl. Phys. Lett. 86 (2005) 211103
9. Briot O., Alexis J.P., Gil B., and Aulombard R.L. Mater. Res. Soc. Symp. Proc. 395 (1996) 207
10. Bremser M.D., Perry W.G., Zheleva T., Edwards N.V., Nam O.H., Parikh N., Aspnes D.E., and Davis R.F. MRS Internet J. Nitride Semicond. Res. 1 (1996) 8
11. Han J., Figiel J.J., Crawford M.H., Banas M.A., Bartram M.E., Biefeld R.M., Song Y.K., and Nurmikko A.V. J. Cryst. Growth 195 (1998) 291
12. Keller S., Heikman S., Ben-Yaacov I., Shen L., DenBaars S.P., and Mishra U.K. Appl. Phys. Lett. 79 (2001) 3449
13. Zhang J.P., Asif Khan M., Sun W.H., Wang H.M., Chen C.Q., Fareed Q., Kuokstis E., and Yang J.W. Appl. Phys. Lett. 81 (2002) 4392