Enhancement Mode In0.53Ga0.47As MOSFET with self-aligned epitaxial Source/Drain regrowth

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2009, Pages 120-123

  Singisetti, Uttam ^a   Wistey, Mark A ^a   Burek, Gregory J ^a   Baraskar, Ashish K ^a   Cagnon, Joël ^a   Thibeault, Brian ^a   Gossard, Arthur C ^a   Stemmer, Susanne ^a   Rodwell, Mark J W ^a   Kim, Eunji ^b   Shin, Byungha ^b   McIntyre, Paul C ^b   Lee, Yong Ju ^c  

^a University of California   (United States)

^b Stanford University   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

III V MOSFET; InGaAs MOSFET; MBE regrowth; MEE

Indexed keywords

CHANNEL LAYERS; DEVICE OPERATIONS; DRIVE CURRENTS; ENHANCEMENT MODES; III-V MOSFET; IN-SITU; INALAS; INGAAS MOSFET; MBE REGROWTH; MEE; MOS-FET; MOSFET PROCESS; MOSFETS; ORDER OF MAGNITUDE; SELF-ALIGNED; SOURCE/DRAIN REGIONS;

DIELECTRIC MATERIALS; ELECTRONIC MEDICAL EQUIPMENT; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM;

MOSFET DEVICES;

EID: 70349486832     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2009.5012456     Document Type: Conference Paper

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