Anomalous capacitance induced by GIDL in P-Channel LTPS TFTs

IEEE Electron Device Letters

Volumn 30, Issue 11, 2009, Pages 1179-1181

  Lin, Chia Sheng ^a   Chen, Ying Chung ^a   Chang, Ting Chang ^a   Chen, Shih Ching ^a   Jian, Fu Yen ^a   Li, Hung Wei ^b   Chen, Te Chih ^a   Weng, Chi Feng ^a   Lu, Jin ^a   Hsu, Wei Che ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Displays; Low temperature polycrystalline silicon thin film transistors (LTPS TFTs)

Indexed keywords

BAND-TO-BAND HOT ELECTRONS; CAPACITANCE VALUES; DISPLAYS; EFFECTIVE CAPACITANCE; LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS; LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS (LTPS TFTS); MEASUREMENT FREQUENCY; OVERLAP REGION;

CAPACITANCE; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES;

THIN FILM TRANSISTORS;

EID: 70350584508     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2031504     Document Type: Article

References (15)

1. Y. C. Wu, T. C. Chang, P. T. Liu, C. S. Chen, C. H. Tu, H. W. Zan, Y. H. Tai, and C. Y. Chang, "Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels," IEEE Trans. Electron Devices, vol. 52, no. 10, pp. 2343-2346, Oct. 2005.
2. K. Yoneda, R. Yokoyama, and T. Yamada, "Development trends of LTPS TFT LCDs for mobile applications," in Proc. Symp. VLSI Circuits, 2001, pp. 85-90.
3. H. Tokioka, M. Agari, M. Inoue, T. Yamamoto, H. Murai, and H. Nagata, "Low power consumption TFT-LCD with dynamic memory embedded in pixels," in Proc. SID, 2001, pp. 280-283.
4. J. G. Fossum, H. A.Oritz-Vonde, and S. K. Shichijo, "Anomalous leakage current in PECVD polysilicon MOSFETs," IEEE Trans. Electron Devices vol. ED-32, no. 9, pp. 1878-1884, Sep. 1985.
5. C. H. Kim, K. S. Sohn, and J. Jang, "Temperature dependent leakage currents in polycrystalline silicon thin film transistors," J. Appl. Phys., vol. 81, no. 12, pp. 8084-8090, Jun. 1997.
6. S. K. Madan and D. A. Antoniadis, "Leakage current mechanisms in hydrogen-passivated fine-grain polycrystalline silicon on insulator MOSFETs," IEEE Trans. Electron Devices, vol. ED-33, no. 10, pp. 1518-1528, Oct. 1986.
7. Y.-H. Tai, S.-C. Hung, C. W Lin, and H. L. Chiu, "Degradation of the capacitance-voltage behaviors of the low-temperature polysilicon TFTs under DC stress," J. Electrochem. Soc., vol. 154, no. 7, pp. H611-H618, May 2007.
8. Y.-H. Tai, S.-C. Hung, and P.-T. Chen, "Degradation mechanism of poly-Si TFTs dynamically operated in OFF region," IEEE Electron Device Lett., vol. 30, no. 3, pp. 231-233, Mar. 2009.
9. H. R. Park, D. Kwon, and J. D. Cohen, "Electrode interdependence and hole capacitance in capacitance-voltage characteristics of hydrogenated amorphous silicon thin-film transistors," J. Appl. Phys., vol. 83, no. 12, pp. 8051-8056, Jun. 1998.
10. M. D. Jacunski, M. S. Shur, and M. Hack, "Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs," IEEE Trans. Electron Devices, vol. 43, no. 9, pp. 1433-1440, Sep. 1996.
11. K. C. Moon, J. H. Lee, and M. K. Han, "Improvement of polycrystalline silicon thin film transistor using oxygen plasma pretreatment before laser crystallization," IEEE Trans. Electron Devices, vol. 49, no. 7, pp. 1319-1322, Jul. 2002.
12. J. H. Chen, S.-C. Wong, and Y.-H. Wang, "An analytical three-terminal band-to-band tunneling model on GIDL in MOSFET," IEEE Trans. Electron Devices, vol. 48, no. 7, pp. 1400-1405, Jul. 2001.
13. H. C. Lin, M. H. Lee, C. J. Su, and S. W. Shen, "Fabrication and characterization of nanowire transistors with solid-phase crystallized poly-Si channels," IEEE Trans. Electron Devices, vol. 53, no. 10, pp. 2471-2477, Oct. 2006.
14. T. C. Cheng, T. C. Chang, F. Y. Jian, S. C. Cheng, C. S. Lin, M. H. Lee, C. C. Shin, and J. S. Chen, "Improvement of memory state misidentification caused by trap-assisted GIDL current in a SONOS-TFT memory device," IEEE Electron Devices Lett., vol. 30, no. 8, pp. 834-836, Aug. 2009.
15. S. H. Han, I. S. Kang, N. K. Song, M. S. Kim, J. S. Lee, and S. K. Joo, "The reduction of the dependence of leakage current on gate bias in metal-induced laterally crystallized p-channel polycrystalline-silicon thin-film transistors by electrical stressing," IEEE Trans. Electron Devices, vol. 54, no. 9, pp. 2546-2550, Sep. 2007.