Electrode interdependence and hole capacitance in capacitance-voltage characteristics of hydrogenated amorphous silicon thin-film transistor

Journal of Applied Physics

Volumn 83, Issue 12, 1998, Pages 8051-8056

  Park, Hyuk Ryeol ^a,b   Kwon, Daewon ^a,c   Cohen, J David ^a  

^a UNIVERSITY OF OREGON   (United States)

^b Mokpo National University   (South Korea)

^c The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001520579     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367898     Document Type: Article

References (13)

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12. in a-Si:H/a-Si,N:H TFTs, the prolonged application of high gate bias results in a parallel shift of the threshold voltages. To avoid this during the measurements of hole activation energy, the samples were pre-biasstressed by applying - 70V on gate electrode for 10 h. After this treatment the threshold voltage shift was almost saturated so that we could neglect the threshold voltage shift during the C-V measurements.
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