The reduction of the dependence of leakage current on gate bias in metal-induced laterally crystallized p-channel polycrystalline-silicon thin-film transistors by electrical stressing

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2546-2550

  Han, Shin Hee ^a   Kang, Il Suk ^a   Song, Nam Kyu ^a   Kim, Min Sun ^b   Lee, Jang Sik ^c   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Kookmin University   (South Korea)

Author keywords

Electrical stress; Leakage current; Metal induced lateral crystallization (MILC); Poly Si thin film transistors (TFTs)

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRON TRAPS; GATES (TRANSISTOR); LEAKAGE CURRENTS; POLYSILICON; SEMICONDUCTOR DOPING;

ELECTRICAL STRESS; METAL-INDUCED LATERAL CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 41749083320     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.901880     Document Type: Article

References (10)

1. S. W. Lee and S. K. Joo, "Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization," IEEE Electron Device Lett., vol. 17, no. 4, pp. 160-162, Apr. 1996.
2. D. Murley, N. Young, M. Trainor, and D. McCulloch, "An investigation of laser annealed and metal-induced crystallized polycrystalline silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 48, no. 6, pp. 1145-1151, Jun. 2001.
3. C. H. Kim, K. S. Sohn, and J. Jang, "Temperature dependent leakage currents in polycrystalline silicon thin film transistors," J. Appl. Phys., vol. 81, no. 12, pp. 8084-8090, Jun. 1997.
4. C. T. Angelis, C. A. Dimitriadis, I. Samaras, J. Brini, G. Kamarinos, V. K. Gueorguiev, and T. E. Ivanov, "Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements," J. Appl. Phys., vol. 82, no. 8, pp. 4095-4101, Oct. 1997.
5. G. B. Kim, Y. G. Yoon, M. S. Kim, H. J. Jung, S. W. Lee, and S. K. Joo, "Electrical characteristics of MILE poly-Si TFTs with long Ni-offset structure," IEEE Trans. Electron Devices, vol. 50, no. 12, pp. 2344-2347, Dec. 2003.
6. M. S. Kim, J. S. Lee, Y. S. Kim, and S. K. Joo, "The effects of crystal filtering on growth of silicon grains in metal-induced lateral crystallization," Electrochem. Solid-State Lett., vol. 9, no. 2, pp. G56-G58, 2006.
7. H. Shin, S. Hong, T. Wetteroth, S. R. Wilson, and D. K. Schroder, "Leak-age current models of thin film silicon-on-insulator devices," Appl. Phys. Lett., vol. 72, no. 10, pp. 1199-1201, Mar. 1998.
8. M. Rodder, "On/off current ratio in p-channel poly-Si MOSFETs: Dependence on hot-carrier stress conditions," IEEE Electron Device Lett., vol. 11, no. 8, pp. 346-348, Aug. 1990.
9. J. G. Fossum, A. Ortiz-Conde, H. Schichijo, and S. Banerjee, "Anomalous leakage current in LPCVD polysilicon MOSFETs," IEEE Trans. Electron Devices, vol. ED-32, no. 9, pp. 1878-1884, Sep. 1985.
10. A. Bonfiglietti, M. Cuscuna, A. Valletta, L. Mariucci, A. Pecora, G. Fortunato, S. D. Brotherton, and J. R. Ayres, "Analysis of electrical characteristics of gate overlapped lightly doped drain (GOLDD) polysilicon thin-film transistors with different LDD doping concentration," IEEE Trans. Electron Devices, vol. 50, no. 12, pp. 2425-2433, Dec. 2003.