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1
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0042463700
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Development of a Nanoelectronic 3-D(NEMO 3-D) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots
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G. Klimeck, F. Oyafuso, T.B. Boykin, R.C. Bowen and P. von Allmen, "Development of a Nanoelectronic 3-D(NEMO 3-D) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots," CMES Vol.3, No.5 pp.601-642,2002
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(2002)
CMES
, vol.3
, Issue.5
, pp. 601-642
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Klimeck, G.1
Oyafuso, F.2
Boykin, T.B.3
Bowen, R.C.4
von Allmen, P.5
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2
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41749098089
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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D:Part I-Models and Benchmarks
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Sept
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G. Klimeck, S. Ahmed, H. Bae, N. Kharche, R. Rahman, S. Clark, B. Haley, S. Lee, M. Naumov, H. Ryu, F. Saied, M. Prada, M. Korkusinski and T.B. Boykin, "Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D:Part I-Models and Benchmarks," IEEE Trans. Elec. Dev., Vol.54, Issue 9, pp2079-2089, Sept.2007
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(2007)
IEEE Trans. Elec. Dev
, vol.54
, Issue.9
, pp. 2079-2089
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Klimeck, G.1
Ahmed, S.2
Bae, H.3
Kharche, N.4
Rahman, R.5
Clark, S.6
Haley, B.7
Lee, S.8
Naumov, M.9
Ryu, H.10
Saied, F.11
Prada, M.12
Korkusinski, M.13
Boykin, T.B.14
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3
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0042999324
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Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory
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T.B. Boykin,G. Klimeck,R.C. Bowen and F. Oyafuso, "Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory," Phys. Rev. B, 66, 125207, 2002
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(2002)
Phys. Rev. B
, vol.66
, pp. 125207
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Boykin, T.B.1
Klimeck, G.2
Bowen, R.C.3
Oyafuso, F.4
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4
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2142713157
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5s* empirical tight-binding model applied to a Si and Ge parameterization
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5s* empirical tight-binding model applied to a Si and Ge parameterization," Phys. Rev. B, 69, 115201, 2004
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(2004)
Phys. Rev. B
, vol.69
, pp. 115201
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Boykin, T.B.1
Klimeck, G.2
Oyafuso, F.3
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5
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84981278178
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Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with a Si/Ge tight-binding parameterization
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T.B. Boykin, N. Kharche and G. Klimeck, "Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with a Si/Ge tight-binding parameterization," Phys. Rev. B, 76, 035310, 2007
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(2007)
Phys. Rev. B
, vol.76
, pp. 035310
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Boykin, T.B.1
Kharche, N.2
Klimeck, G.3
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6
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41749112698
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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D:Part II-Applications
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Sept
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G. Klimeck, S. Ahmed, N. Kharche, M. Korkusinski, M. Usman, M. Prada and T.B. boykin, "Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D:Part II-Applications," IEEE Trans. Elec. Dev., Vol.54, Issue 9, pp2090-2099, Sept.2007
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(2007)
IEEE Trans. Elec. Dev
, vol.54
, Issue.9
, pp. 2090-2099
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Klimeck, G.1
Ahmed, S.2
Kharche, N.3
Korkusinski, M.4
Usman, M.5
Prada, M.6
boykin, T.B.7
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7
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70350233104
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Aug
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S. Ahmed, N. Kharche, R. Rahman, M. Usman, S. Lee, H. Ryu, H. Bae, S. Clark, B. Haley, M. Naumov, F. Saied, M. Korkusinski, R. Kennel, M. McLennan, G. Klimeck, T.B. Boykin, "Multimillion Atom Simulations with NEMO 3-D,"Springer Encyclopedia for Complexity,Aug.2008
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(2008)
Multimillion Atom Simulations with NEMO 3-D,Springer Encyclopedia for Complexity
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Ahmed, S.1
Kharche, N.2
Rahman, R.3
Usman, M.4
Lee, S.5
Ryu, H.6
Bae, H.7
Clark, S.8
Haley, B.9
Naumov, M.10
Saied, F.11
Korkusinski, M.12
Kennel, R.13
McLennan, M.14
Klimeck, G.15
Boykin, T.B.16
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8
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33847643167
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Valley-splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder and alloy disorder
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N. Kharche, M. Prada, T.B. Boykin and G. Klimeck, "Valley-splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder and alloy disorder," Applied Phys. Lett., 90, 092109, 2007
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(2007)
Applied Phys. Lett
, vol.90
, pp. 092109
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Kharche, N.1
Prada, M.2
Boykin, T.B.3
Klimeck, G.4
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9
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48749117974
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Gate-induced Quantum-confinement Transition of a Single Dopant Atom in a Silicon FinFET
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Aug
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G.P. Lansbergen, R. Rahman, C.J. Wellard, I. Woo, J. Caro, N. Collaert, S Biesemans, G. Klimeck, L.C.L. Hollenberg and S. Rogge, "Gate-induced Quantum-confinement Transition of a Single Dopant Atom in a Silicon FinFET," Nature Physics, 4, pp656-661, Aug.2008
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(2008)
Nature Physics
, vol.4
, pp. 656-661
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Lansbergen, G.P.1
Rahman, R.2
Wellard, C.J.3
Woo, I.4
Caro, J.5
Collaert, N.6
Biesemans, S.7
Klimeck, G.8
Hollenberg, L.C.L.9
Rogge, S.10
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10
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64549107367
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Transport-based Dopant Mapping in Advanced FinFETs
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San Francisco, USA, Dec. 15-17
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G.P. Lansbergen, R. Rahman, C.J. Wellard, J. Carol, N. Collaert, S. Biesemans, G. Klimeck, L.C.L. Hollenberg and S. Rogge, "Transport-based Dopant Mapping in Advanced FinFETs," IEEE IEDM, San Francisco, USA, Dec. 15-17, 2008
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(2008)
IEEE IEDM
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Lansbergen, G.P.1
Rahman, R.2
Wellard, C.J.3
Carol, J.4
Collaert, N.5
Biesemans, S.6
Klimeck, G.7
Hollenberg, L.C.L.8
Rogge, S.9
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11
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67249140171
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Moving Towards nano-TCAD Multi-million Atom Quantum Dot Simulations Matching Experimental Data
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to appear in
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M. Usman, H. Ryu, I. Woo, D.S. Ebert and G. Klimeck, "Moving Towards nano-TCAD Multi-million Atom Quantum Dot Simulations Matching Experimental Data," Accepted in IEEE Trans. on Nanotechnology, to appear in 2009
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(2009)
Accepted in IEEE Trans. on Nanotechnology
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Usman, M.1
Ryu, H.2
Woo, I.3
Ebert, D.S.4
Klimeck, G.5
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12
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70350228190
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A Nano-electronics Simulator for Petascale Computing: From NEMO to OMEN
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June 9-13, Las Vegas
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H. Bae, S. Clark, B. Haley, H. Ryu, G. Klimeck, S. Lee, M. Luisier and F. Saied, "A Nano-electronics Simulator for Petascale Computing: from NEMO to OMEN," Proceedings of TeraGrid 2008, June 9-13, 2008, Las Vegas
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(2008)
Proceedings of TeraGrid 2008
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Bae, H.1
Clark, S.2
Haley, B.3
Ryu, H.4
Klimeck, G.5
Lee, S.6
Luisier, M.7
Saied, F.8
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13
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70350218496
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http://cobweb.ecn.purdue.edu/∼gekco/nemo3D/index.html
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14
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44949249071
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Bandstructure Effects in Silicon Nanowire Electron Transport
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June
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N. Neophytou, A. Paul, M. Lundstrom and G. Klimeck, "Bandstructure Effects in Silicon Nanowire Electron Transport," IEEE TED, Vol. 55, Issue 6, pp1286-1297, June 2008
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(2008)
IEEE TED
, vol.55
, Issue.6
, pp. 1286-1297
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Neophytou, N.1
Paul, A.2
Lundstrom, M.3
Klimeck, G.4
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15
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70350215434
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Study of electronic charge distribution in silicon nanowire transistors: An atomistic approach
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March 16-20, Pittsburgh, PA
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A. Paul, S. Mehrotra and G. Klimeck, "Study of electronic charge distribution in silicon nanowire transistors: an atomistic approach," APS March Meeting, March 16-20, Pittsburgh, PA, 2009
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(2009)
APS March Meeting
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Paul, A.1
Mehrotra, S.2
Klimeck, G.3
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16
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34547657159
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One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy
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F.J. Reuss, B. Weber, K.E.J. Goh, O. Klochan, A.R. Hamilton and M.Y. Simmons, "One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy," Phys. Rev. B, 76, 085403, 2007
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(2007)
Phys. Rev. B
, vol.76
, pp. 085403
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Reuss, F.J.1
Weber, B.2
Goh, K.E.J.3
Klochan, O.4
Hamilton, A.R.5
Simmons, M.Y.6
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17
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7544248820
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Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy
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F.J. Reuss, L. Oberbeck, M.Y. Simmons, K.E.J. Goh, A.R. Hamilton, T. Hallam,S.R. Schofield, N.J. Curson and R.G. Clark, "Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy," Nano Letters, 4(10), pp 1969-1973, 2004
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(2004)
Nano Letters
, vol.4
, Issue.10
, pp. 1969-1973
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Reuss, F.J.1
Oberbeck, L.2
Simmons, M.Y.3
Goh, K.E.J.4
Hamilton, A.R.5
Hallam, T.6
Schofield, S.R.7
Curson, N.J.8
Clark, R.G.9
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18
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33947523647
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Electronic properties of atomically abrupt tunnel junctions in Silicon
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F.J. Reuss, W. Pok, K.E.J. Goh, A.R. Hamilton and M.Y. Simmons, "Electronic properties of atomically abrupt tunnel junctions in Silicon," Phys. Rev. B, 75, 121303, 2007
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(2007)
Phys. Rev. B
, vol.75
, pp. 121303
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Reuss, F.J.1
Pok, W.2
Goh, K.E.J.3
Hamilton, A.R.4
Simmons, M.Y.5
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19
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70350234825
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H. Ryu, S. Lee and G. Klimeck, A Study of Temperature-dependent properties of n-type δ-doped Si bandstructures in equilibrium, Accepted in IWCE-13, IEEE proceedings, 2009
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H. Ryu, S. Lee and G. Klimeck, "A Study of Temperature-dependent properties of n-type δ-doped Si bandstructures in equilibrium," Accepted in IWCE-13, IEEE proceedings, 2009
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