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Volumn , Issue , 2009, Pages

Million atom electronic structure and device calculations on Peta-Scale computers

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC MODELING; CONSTITUENT MATERIALS; DOMAIN DECOMPOSITIONS; IMPURITY BANDS; MODELING TOOL; MULTI-LEVEL PARALLELISM; POISSON SOLVERS; QUANTUM MECHANICAL EFFECTS; SURFACE EFFECT; TIGHT BINDING MODEL;

EID: 70350241406     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2009.5091117     Document Type: Conference Paper
Times cited : (17)

References (19)
  • 1
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    • Development of a Nanoelectronic 3-D(NEMO 3-D) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots
    • G. Klimeck, F. Oyafuso, T.B. Boykin, R.C. Bowen and P. von Allmen, "Development of a Nanoelectronic 3-D(NEMO 3-D) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots," CMES Vol.3, No.5 pp.601-642,2002
    • (2002) CMES , vol.3 , Issue.5 , pp. 601-642
    • Klimeck, G.1    Oyafuso, F.2    Boykin, T.B.3    Bowen, R.C.4    von Allmen, P.5
  • 3
    • 0042999324 scopus 로고    scopus 로고
    • Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory
    • T.B. Boykin,G. Klimeck,R.C. Bowen and F. Oyafuso, "Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory," Phys. Rev. B, 66, 125207, 2002
    • (2002) Phys. Rev. B , vol.66 , pp. 125207
    • Boykin, T.B.1    Klimeck, G.2    Bowen, R.C.3    Oyafuso, F.4
  • 4
    • 2142713157 scopus 로고    scopus 로고
    • 5s* empirical tight-binding model applied to a Si and Ge parameterization
    • 5s* empirical tight-binding model applied to a Si and Ge parameterization," Phys. Rev. B, 69, 115201, 2004
    • (2004) Phys. Rev. B , vol.69 , pp. 115201
    • Boykin, T.B.1    Klimeck, G.2    Oyafuso, F.3
  • 5
    • 84981278178 scopus 로고    scopus 로고
    • Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with a Si/Ge tight-binding parameterization
    • T.B. Boykin, N. Kharche and G. Klimeck, "Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with a Si/Ge tight-binding parameterization," Phys. Rev. B, 76, 035310, 2007
    • (2007) Phys. Rev. B , vol.76 , pp. 035310
    • Boykin, T.B.1    Kharche, N.2    Klimeck, G.3
  • 6
    • 41749112698 scopus 로고    scopus 로고
    • Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D:Part II-Applications
    • Sept
    • G. Klimeck, S. Ahmed, N. Kharche, M. Korkusinski, M. Usman, M. Prada and T.B. boykin, "Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D:Part II-Applications," IEEE Trans. Elec. Dev., Vol.54, Issue 9, pp2090-2099, Sept.2007
    • (2007) IEEE Trans. Elec. Dev , vol.54 , Issue.9 , pp. 2090-2099
    • Klimeck, G.1    Ahmed, S.2    Kharche, N.3    Korkusinski, M.4    Usman, M.5    Prada, M.6    boykin, T.B.7
  • 8
    • 33847643167 scopus 로고    scopus 로고
    • Valley-splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder and alloy disorder
    • N. Kharche, M. Prada, T.B. Boykin and G. Klimeck, "Valley-splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder and alloy disorder," Applied Phys. Lett., 90, 092109, 2007
    • (2007) Applied Phys. Lett , vol.90 , pp. 092109
    • Kharche, N.1    Prada, M.2    Boykin, T.B.3    Klimeck, G.4
  • 11
  • 13
    • 70350218496 scopus 로고    scopus 로고
    • http://cobweb.ecn.purdue.edu/∼gekco/nemo3D/index.html
  • 14
    • 44949249071 scopus 로고    scopus 로고
    • Bandstructure Effects in Silicon Nanowire Electron Transport
    • June
    • N. Neophytou, A. Paul, M. Lundstrom and G. Klimeck, "Bandstructure Effects in Silicon Nanowire Electron Transport," IEEE TED, Vol. 55, Issue 6, pp1286-1297, June 2008
    • (2008) IEEE TED , vol.55 , Issue.6 , pp. 1286-1297
    • Neophytou, N.1    Paul, A.2    Lundstrom, M.3    Klimeck, G.4
  • 15
    • 70350215434 scopus 로고    scopus 로고
    • Study of electronic charge distribution in silicon nanowire transistors: An atomistic approach
    • March 16-20, Pittsburgh, PA
    • A. Paul, S. Mehrotra and G. Klimeck, "Study of electronic charge distribution in silicon nanowire transistors: an atomistic approach," APS March Meeting, March 16-20, Pittsburgh, PA, 2009
    • (2009) APS March Meeting
    • Paul, A.1    Mehrotra, S.2    Klimeck, G.3
  • 16
    • 34547657159 scopus 로고    scopus 로고
    • One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy
    • F.J. Reuss, B. Weber, K.E.J. Goh, O. Klochan, A.R. Hamilton and M.Y. Simmons, "One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy," Phys. Rev. B, 76, 085403, 2007
    • (2007) Phys. Rev. B , vol.76 , pp. 085403
    • Reuss, F.J.1    Weber, B.2    Goh, K.E.J.3    Klochan, O.4    Hamilton, A.R.5    Simmons, M.Y.6
  • 18
    • 33947523647 scopus 로고    scopus 로고
    • Electronic properties of atomically abrupt tunnel junctions in Silicon
    • F.J. Reuss, W. Pok, K.E.J. Goh, A.R. Hamilton and M.Y. Simmons, "Electronic properties of atomically abrupt tunnel junctions in Silicon," Phys. Rev. B, 75, 121303, 2007
    • (2007) Phys. Rev. B , vol.75 , pp. 121303
    • Reuss, F.J.1    Pok, W.2    Goh, K.E.J.3    Hamilton, A.R.4    Simmons, M.Y.5
  • 19
    • 70350234825 scopus 로고    scopus 로고
    • H. Ryu, S. Lee and G. Klimeck, A Study of Temperature-dependent properties of n-type δ-doped Si bandstructures in equilibrium, Accepted in IWCE-13, IEEE proceedings, 2009
    • H. Ryu, S. Lee and G. Klimeck, "A Study of Temperature-dependent properties of n-type δ-doped Si bandstructures in equilibrium," Accepted in IWCE-13, IEEE proceedings, 2009


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.