Simultaneous realization of stabilized temperature characteristics and low-voltage driving of a micromirror using the thin-film torsion bar of tensile poly-Si

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 5, 2009, Pages 1455-1462

  Sasaki, Minoru ^a,b   Fujishima, Masayuki ^c   Hane, Kazuhiro ^b   Miura, Hideo ^b  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c RICOH COMPANY LTD   (Japan)

Author keywords

Crystallization induced stress; Low voltage driving; Micromirror; Temperature characteristics; Thin film torsion bar

Indexed keywords

AMORPHOUS SI; COEFFICIENT OF THERMAL EXPANSION; CRYSTALLINE SI; ELECTRICAL CONNECTION; LOW-VOLTAGE DRIVING; MICROMIRROR; POLY-SI; POLYCRYSTALLINE; SI SUBSTRATES; TEMPERATURE CHARACTERISTIC; TEMPERATURE CHARACTERISTICS; THIN-FILM TORSION BAR; TORSION BAR;

AMORPHOUS MATERIALS; CRYSTALLIZATION; ELECTRIC CONNECTORS; POLYSILICON; THERMAL EXPANSION; THIN FILM DEVICES; TORSIONAL STRESS;

AMORPHOUS SILICON;

EID: 70350189947     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2022281     Document Type: Conference Paper

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