In situ doping of silicon deposited by LPCVD: Pressure influence on dopant incorporation mechanisms

Semiconductor Science and Technology

Volumn 14, Issue 2, 1999, Pages 173-180

  Briand, D ^a   Sarret, M ^a   Kis Sion, K ^a   Mohammed Brahim, T ^a   Duverneuil, P ^b  

^a Grp Microlectron et Visualisation   (France)

^b LABORATOIRE DE GÉNIE CHIMIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; PHOSPHORUS; PRESSURE EFFECTS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILANES;

DIBORANE; LOW-PRESSURE CHEMICAL VAPOUR DEPOSITION (LPCVD); MONOSILYLBORANE; MONOSILYLPHOSPHINE; PHOSPHINE; SILYLENE;

SEMICONDUCTING FILMS;

EID: 0033075127     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/2/012     Document Type: Article

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