Radiation resistance of SOI pixel devices fabricated with OKI 0.15 μm FD-SOI technology

IEEE Transactions on Nuclear Science

Volumn 56, Issue 5, 2009, Pages 2896-2904

  Hara, Kazuhiko ^a   Kochiyama, Mami ^a   Mochizuki, Ai ^a,b   Sega, Tomoko ^a   Arai, Yasuo ^c   Fukuda, Koichi ^d   Hayashi, Hirokazu ^d   Hirose, Minoru ^e   Ida, Jiro ^d   Ikeda, Hirokazu ^f   Ikegami, Yoichi ^c   Ikemoto, Yukiko ^c   Kawai, Yasuaki ^d   Kohriki, Takashi ^c   Komatsubara, Hirotaka ^g   Miyake, Hideki ^a   Miyoshi, Toshinobu ^c   Ohno, Morifumi ^d   Okihara, Masao ^g   Terada, Susumu ^c   Tsuboyama, Toru ^c   Unno, Yoshinobu ^c   more..

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c INSTITUTE OF PARTICLE AND NUCLEAR STUDIES   (Japan)

^d Oki Semiconductor Co Ltd   (Japan)

^e OSAKA UNIVERSITY   (Japan)

^f JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^g Miyagi Oki Electric Co Ltd   (Japan)

Author keywords

FD SOI; Monolithic pixel; Threshold shift

Indexed keywords

DEVICE FABRICATIONS; FD-SOI; FULLY DEPLETED SOI; MATRIX; MONOLITHIC PIXEL; MONOLITHIC PIXELS; OXIDE LAYER; PERFORMANCE CHARACTERIZATION; PHOTON DETECTOR; PIXEL DETECTOR; RADIATION RESISTANCE; RADIATION-INDUCED; RESET SIGNALS; SILICON RESISTIVITY; SOI TECHNOLOGY; SOI WAFERS; TEST STRUCTURE; THRESHOLD SHIFT; UNIBOND;

DETECTORS; FABRICATION; FINITE DIFFERENCE METHOD; PHOTONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TRANSISTORS;

PIXELS;

EID: 70350173271     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2028573     Document Type: Article

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