Deep sub-micron FD-SOI for front-end application

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 579, Issue 2 SPEC. ISS., 2007, Pages 701-705

  Ikeda, H ^a   Arai, Y ^b   Hara, K ^c   Hayakawa, H ^a   Hirose, K ^a   Ikegami, Y ^b   Ishino, H ^d   Kasaba, Y ^a   Kawasaki, T ^e   Kohriki, T ^b   Martin, E ^f   Miyake, H ^g   Mochizuki, A ^c   Tajima, H ^h   Tajima, O ^b   Takahashi, T ^a   Takashima, T ^a   Terada, S ^b   Tomita, H ^a   Tsuboyama, T ^b   Unno, Y ^b   Ushiroda, H ^b   Varner, G ^f   more..

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b INSTITUTE OF PARTICLE AND NUCLEAR STUDIES   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^e NIIGATA UNIVERSITY   (Japan)

^f UNIVERSITY OF HAWAII   (United States)

^g OSAKA UNIVERSITY   (Japan)

^h SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

CMOS analog; Deep sub micron CMOS; FD SOI; Front end; Radiation effect

Indexed keywords

CMOS INTEGRATED CIRCUITS; MICROPROCESSOR CHIPS; RADIATION EFFECTS;

MULTI-CHIP PROJECT; SUB-MICRONS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 34547755613     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.05.280     Document Type: Article

References (5)

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4. Y. Ikegami, et al., Nucl. Instr. and Meth. A (2007), in press.
5. Jarron P., et al. Nucl. Instr. and Meth. A 377 (1996) 435