Impact of 24-GeV proton irradiation on 0.13-μm CMOS devices

IEEE Transactions on Nuclear Science

Volumn 53, Issue 4, 2006, Pages 1917-1922

  Gerardin, Simone ^a,b,c   Gasperin, Alberto ^b,c   Cester, Andrea ^a,b,c   Paccagnella, Alessandro ^a,b,c   Ghidini, Gabriella ^d   Candelori, Andrea ^c   Bacchetta, Nicola ^c   Bisello, Dario ^c   Glaser, Maurice ^e  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c SEZIONE DI PADOVA   (Italy)

^d STMICROELECTRONICS   (Italy)

^e CERN   (Switzerland)

Author keywords

CMOS; High energy physics experiments; Ultrathin gate oxides

Indexed keywords

DRAIN OFF-CURRENT; IRRADIATED DEVICES; PROTON FLUENCE; ULTRATHIN GATE OXIDES;

GATES (TRANSISTOR); HIGH ENERGY PHYSICS; LEAKAGE CURRENTS; MOSFET DEVICES; PROTON IRRADIATION; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CMOS INTEGRATED CIRCUITS;

EID: 33748340024     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.880943     Document Type: Conference Paper

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