Characterization of micro-strip detectors made with high resistivity n- and p-type Czochralski silicon

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 573, Issue 1-2, 2007, Pages 216-219

  Macchiolo, A ^a   Borrello, L ^b   Boscardin, M ^c   Bruzzi, M ^a   Creanza, D ^d   Dalla Betta, G F ^c   DePalma, M ^d   Focardi, E ^a   Manna, N ^d   Menichelli, D ^a   Messineo, A ^b   Piemonte, C ^c   Radicci, V ^d   Ronchin, S ^c   Scaringella, M ^a   Segneri, G ^b   Sentenac, D ^b   Zorzi, N ^c  

^a UNIVERSITY OF FLORENCE   (Italy)

^b UNIVERSITY OF PISA   (Italy)

^c ITC IRST   (Italy)

^d INFN SEZIONE DI BARI   (Italy)

Author keywords

Micro strip detectors; Radiation damage; Silicon detectors

Indexed keywords

ELECTRIC CONDUCTIVITY; MAGNETIC FIELDS; RADIATION DAMAGE; SEMICONDUCTOR DEVICES; SILICON DETECTORS; SILICON WAFERS;

CZOCHRALSKI MINI-SENSORS; MICRO-STRIP DETECTORS; SILICON MICRO-STRIP SENSORS;

MICROSTRIP DEVICES;

EID: 33847668389     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.10.244     Document Type: Article

References (9)

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