Evaluation of OKI SOI technology

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 579, Issue 2 SPEC. ISS., 2007, Pages 706-711

  Ikegami, Y ^a   Arai, Y ^a   Hara, K ^b   Hazumi, M ^a   Ikeda, H ^c   Ishino, H ^d   Kohriki, T ^a   Miyake, H ^e   Mochizuki, A ^b   Terada, S ^a   Tsuboyama, T ^a   Unno, Y ^a  

^a INSTITUTE OF PARTICLE AND NUCLEAR STUDIES   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^e OSAKA UNIVERSITY   (Japan)

Author keywords

CMOS; FET; Radiation damage; SOI

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC UTILITIES; FABRICATION; FIELD EFFECT TRANSISTORS; RADIATION DAMAGE; SEMICONDUCTOR JUNCTIONS;

JUNCTION CAPACITANCE; OKI ELECTRIC INDUSTRY CO. (CO); TEST ELEMENT GROUP (TEG) STRUCTURES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 34547753560     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.05.272     Document Type: Article

References (7)

1. Y. Arai, et al., Monolithic pixel detector in a 0.15 μm FD-SOI technology, presented in this conference, SLAC-PUB-12079 〈http://rd.kek.jp/project/soi/〉.
2. 〈http://www.oki.com〉, 〈http://www.oki.com/en/otr/196/downloads/otr-196-R15.pdf〉.
3. Ikeda H. Nucl. Instr. and Meth. A 569 (2006) 98
4. Blaes B.R., et al. IEEE Trans. Nucl. Sci. NS-35 (1988) 1529
5. CERN Council Resolution, The European Strategy for Particle Physics, 14 July 2006.
6. Schwank J.R., et al. IEEE Trans. Nucl. Sci. NS-50 (2003) 522
7. Gerardin S., et al. IEEE Trans. Nucl. Sci. NS-53 (2006) 1917