Type inversion in silicon detectors

Nuclear Inst. and Methods in Physics Research, A

Volumn 311, Issue 1-2, 1992, Pages 98-104

  Pitzl, D ^a   Cartiglia, N ^a   Hubbard, B ^a   Hutchinson, D ^a   Leslie, J ^a   O'Shaughnessy, K ^a   Rowe, W ^a   Sadrozinski, H F W ^a   Seiden, A ^a   Spencer, E ^a   Ziock, H J ^b   Ferguson, P ^b   Holzscheiter, K ^b   Sommer, W F ^b  

^a UNIVERSITY OF CALIFORNIA SANTA CRUZ   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002697689     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(92)90854-W     Document Type: Article

References (16)

1. Tests of the radiation hardness of VLSI integrated circuits and silicon strip detectors for the SSC under neutron, proton, and gamma irradiation
2. High resistivity silicon for detector applications
3. Proc. 2nd Conf. on Advanced Technology and Particle Physics
4. Studies of frequency dependent C-V characteristics of neutron irradiated p/sup +/-n silicon detectors
5. Radiation damage in silicon strip detectors