Crystallization and C-RAM application of Ag-doped Sb2Te 3 material

Materials Science and Engineering: B

Volumn 127, Issue 2-3, 2006, Pages 228-232

  Xu, Jiaqing ^a,b   Liu, Bo ^a   Song, Zhitang ^a   Feng, Songlin ^a   Chen, Bomy ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Ag doping; C RAM; Crystallization; Sb2Te3

Indexed keywords

ANTIMONY COMPOUNDS; CRYSTALLIZATION; DIFFERENTIAL SCANNING CALORIMETRY; DOPING (ADDITIVES); MAGNETRON SPUTTERING; RANDOM ACCESS STORAGE; SILVER; THIN FILMS;

AG-DOPING; C-RAM; POLYCRYSTALLINE STATE; SB2TE3;

AMORPHOUS FILMS;

EID: 31144473548     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.10.023     Document Type: Article

References (25)

1. S.R. Ovshinsky Phys. Rev. Lett. 21 1968 1450
2. T. Ohta, K. Nishiuchi, and K. Narumi Jpn. J. Appl. Phys. 39 2000 770
3. T. Maeda, M. Terao, and T. Shimano Jpn. J. Appl. Phys. 42 2003 1044
4. S. Lai, T. Lowrey, IEEE Proceedings of the International Electron Devices Meeting, 2001, pp. 36.5.1.
5. K.F. Strauss, and D. Taher IEEE Aerospace Conference Proceedings 5 2001 399
6. B.J. Kooi, W.M.G. Groot, and J.Th.M.De. Hosson J. Appl. Phys. 95 2004 924
7. M. Chen, K.A. Rubin, and R.M. Barton Appl. Phys. Lett. 49 1986 502
8. E.M. Sanchez, E. Prokhorov, and Y. Vorobiev Solid State Commun. 122 2002 185
9. M.H.R. Lankhorst J. Non-Cryst. Solids 297 2002 210
10. B. Liu, Z.T. Song, and S.L. Feng Mater. Sci. Eng. B 119 2005 125
11. B. Liu, T. Zhang, and J.L. Xia Semicond. Sci. Technol. 19 2004 L61
12. B. Liu, Z.T. Song, and T. Zhang Appl. Surf. Sci. 242 2005 62
13. Y.C. Chen, C.T. Chen, and J.Y. Yu IEEE Custom Integrated Circuits Conference 2003 395
14. T. Zhang, B. Liu, and J.L. Xia Chin. Phys. Lett. 21 2004 741
15. B. Liu, Z.T. Song, and S.L. Feng Chin. Phys. Lett. 21 2002 1143
16. B. Liu, Z.T. Song, and S.L. Feng Chin. Phys. 13 2004 1947
17. P. Arun, T. Pankaj, and A.G. Vedeshwar Physica B 307 2001 105
18. T.L. Chao, C.K. Po, and C.H. Wei Jpn. J. Appl. Phys. 42 2003 26
19. Y.M. Chen, and P.C. Kuo IEEE Trans. Magn. 34 1998 432
20. R.W. Armstrong, J.W. Faust Jr., and W.A. Tiller J. Appl. Phys. 31 1960 1954
21. R. Kojima, S. Okabayashi, and S. Kashihara Jpn. J. Appl. Phys. 37 1998 2098
22. H. Horii, J.H. Yi, J.H. Park, et al., Symposium on VLSI technology Digest of Technical Papers, 2003, p. 177.
23. A. Pirovano, A.L. Lacaita, and A. Benvenuti IEEE Trans. Electron Devices 51 2004 452
24. Y.H. Ha, J.H. Yi, H. Horii, et al., Symposium on VLSI technology Digest of Technical Papers, 2003, p. 175.
25. N. Takaura, M. Terao, and K. Kurotsuchi IEEE Conference Proceedings of International Electron Devices Meeting 2003 897