Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application

Ceramics International

Volumn 34, Issue 4, 2008, Pages 1043-1046

  Kim, Myoung Sub ^a   Cho, Sung Hyuk ^a   Hong, Suk Kyoung ^b   Roh, Jae Sung ^b   Choi, Doo Jin ^a  

^a Yonsei University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

A. Films; C. Electrical properties; PRAM; Sb2Te3; Sputter

Indexed keywords

ANTIMONY ALLOYS; CRYSTALLIZATION; DOPING (ADDITIVES); MASS SPECTROMETRY; NITROGEN; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS PHASES; CRYSTALLIZATION TEMPERATURE; PHASE CHANGE RANDOM ACCESS MEMORY (PRAM);

PHASE CHANGE MATERIALS;

EID: 42949089846     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2007.09.078     Document Type: Article

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