Optimization of ZnSe growth on miscut GaAs substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 249, Issue 1-2, 2003, Pages 128-143

  Song, J S ^a   Chang, J H ^a   Oh, D C ^a   Kim, J J ^a   Cho, M W ^b   Makino, H ^a   Hanada, T ^a   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b LG Electronics Inc   (South Korea)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting II VI materials

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; ZINC COMPOUNDS;

BEAM EQUIVALENT PRESSURE (BEP);

GALLIUM COMPOUNDS;

EID: 0037296858     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02129-2     Document Type: Conference Paper

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