A two-temperature model of narrow-body silicon transistors under steady state and transient operation

2008 Proceedings of 3rd Energy Nanotechnology International Conference, ENIC 2008

Volumn , Issue , 2009, Pages 97-108

  Ong, Zhun Yong ^a   Pop, Eric ^a  

^a United States of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1-D MODELS; 2-D MODEL; ACOUSTIC PHONONS; BOLTZMANN TRANSPORT EQUATION; BOUNDARY SCATTERING; DISPERSION MODELS; ENERGY RELAXATION; HEAT TRANSPORT; LATTICE THERMAL CONDUCTIVITY; MEAN FREE PATH; NUMERICAL RESULTS; OPTICAL PHONONS; SILICON ON INSULATOR; SILICON THIN FILM; SILICON TRANSISTORS; STEADY STATE; TRANSIENT OPERATION; TRANSIENT TEMPERATURE DISTRIBUTIONS; TWO TEMPERATURE MODEL; TWO-TEMPERATURE MODELS;

ACOUSTICS; BOLTZMANN EQUATION; CRYSTAL LATTICES; ELECTROMAGNETIC WAVE EMISSION; ENERGY TRANSFER; GLASS INDUSTRY; HEAT TRANSFER; NANOTECHNOLOGY; PHONONS; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY; THERMOANALYSIS; THIN FILMS; TRUCK TRAILERS;

ACOUSTIC WAVE SCATTERING;

EID: 70349904400     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (30)

1. Pop, E., R.W. Dutton, and K.E. Goodson. Thermal analysis of ultra-thin body device scaling (501 and FinFET devices), in IEEE Intl. Electron Devices Meeting (IEDM). 2003. Washington, DC: IEEE.
2. Wong, H.-S.P., Beyond the conventional transistor IBM J. Res. Dev., 2002. 46: p. 133.
3. Lyeo, H.-K. and D.G. Cahill, Thermal conductance of interfaces between highly dissimilar materials. Phys. Rev. B, 2006. 73: p. 144301.
4. Pop, E., Heat Generation and Transport in 501 and GOl Devices, in ECS Meeting, 501 Symposium. 2007: Chicago, IL.
5. Liu, W. and M. Asheghi, Thermal conductivity measurements of ultra-thin single crystal silicon layers. J. Heat Transfer, 2006. 128: p. 75-83.
6. Sinha, S., et al., Non-equilibrium phonon distributions in sub-100 nm silicon transistors. J. Heat Transfer, 2006. 128: p. 638-647.
7. Sinha, S., E. Pop, and K.E. Goodson. A split-flux model for phonon transport near hotspots. in Intl. Mech. Eng. Congress and Expo (IMECE). 2004. Anaheim, CA.
8. Majumdar, A., Microscale heat conduction in dielectric thin JIlms. J. Heat Transfer, 1993. 115: p. 7.
9. Mazumder, S. and A. Majumdar, Monte Carlo study of phonon transport in solid thin films including dispersion and polarization. J. Heat Transfer, 2001. 123: p. 749-759.
10. Narumanchi, S.V.J., J.Y. Murthy, and C.H. Amon, Comparison of Different Phonon Transport Models for Predicting Heat Conduction in Silicon-on-Insulator Transistors. J. Heat Transfer, 2005. 127(7): p. 713-723.
11. Ju, Y.S. and K.E. Goodson, Phonon scattering in silicon thin films with thickness of order 100 nm. Appl. Phys. Lett., 1999. 74: p. 3005-3007.
12. Pop, E., et al. Joule heating under quasi-ballistic transport conditions in bulk and strained silicon devices, in Intl. Conf on Simulation of Semiconductor Processes and Devices (SISPAD). 2005. Tokyo, Japan.
13. Pop, E., R.W. Dutton, and K.E. Goodson, Monte Carlo simulation of Joule heating in bulk and strained silicon. Appl. Phys. Lett., 2005. 86: p. 082101.
14. Tritt, T.M., Thermal conductivity: theory, properties, and applications. 2004: Kluwer Academic/Plenum Publishers.
15. Sverdrup, P.G., Y.S. Ju, and K.E. Goodson, Sub- continuum simulations of heat conduction in silicon- on-insulator transistors. J. Heat Transfer, 2001. 123: p. 130-137.
16. Narumanchi, S.V.J., J.Y. Murthy, and C.H. Amon, Submicron heat transport model in silicon accounting for phonon dispersion and polarization. J. Heat Transfer, 2004. 126: p. 946-955.
17. Liu, W. and M. Asheghi, Thermal conduction in ultrathin pure and doped single-crystal silicon layers at high temperature. J. Appl. Phys., 2005. 98: p. 123523.
18. Anisimov, S.1., B.L. Kapeliovich, and T.L. Perelman, Electron-emission from surface of metals induced by ultrashort laser pulses. Soy. Phys. JETP, 1974. 39.
19. Kaganov, M.1., 1.M. Lifshitz, and L. V. Tanatarov, Relaxation between electrons and crystalline lattices. Soy. Phys. JETP, 1957. 4: p. 173.
20. Fushinobu, K., A. Majumdar, and K. Hijikata, Heat generation and transport in submicron semiconductor devices. J. Heat Transfer, 1995. 117: p. 25-31.
21. Letcher, J.J., et al., Effects of high carrier densities on phonon and carrier lifetimes in Si by time-resolved anti-Stokes Raman scattering. Appl. Phys. Lett., 2007. 90.
22. Menéndez, J. and M. Cardona, Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and a-Sn: Anharmonic effects. Phys. Rev. B, 1984. 29.
23. Kittel, C., Introduction to solid-state physics. 7 ed. 1995: John Wiley & Sons.
24. Pop, E., S. Sinha, and K.E. Goodson, Heat generation and transport in nanometer-scale transistors. Proc. IEEE, 2006. 94(8): p. 1587-1601.
25. Pop, E., et al. Electro-thermal comparison and performance optimization of thin-body SOl and GOl MOSFETs. in IEEE Intl. Electron Devices Mtg. (IEDM). 2004. San Francisco, CA: IEEE.
26. COMSOL Multiphvsics. http://www.comsol.com [cited.
27. Goodson, K.E. and M.1. Flik, Effect of microscale thermal conduction on the packing limit of silicon- on-insulator electronic devices. IEEE Trans. Components, Hybrids, Manufacturing Technol., 1992. 15(5): p. 7 15-722.
28. Incropera, F.P. and D.P. DeWitt, Fundamentals of heat and mass transfer. 5 ed. 2001: Wiley & Sons.
29. Dumont, T., Late Triassic-earlv Jurassic evolution of the western Alps and of their European foreland - Initiation of the Tethyan rifting. Bulletin de la Société géologique de France, 1999. 4(4): p. 601.
30. Ju, Y.S. and K.E. Goodson, Process-dependent thermal transport properties of silicon-dioxide films deposited using low-pressure chemical vapor deposition. J. Appl. Phys., 1999. 85.