Effects of high carrier densities on phonon and carrier lifetimes in Si by time-resolved anti-Stokes Raman scattering

Applied Physics Letters

Volumn 90, Issue 25, 2007, Pages

  Letcher, Jeffrey J ^a   Kang, Kwangu ^a   Cahill, David G ^a   Dlott, Dana D ^a,b  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-STOKES RAMAN SCATTERING; ELEMENTARY EXCITATIONS;

CARRIER LIFETIME; LASER EXCITATION; PHONONS; RAMAN SCATTERING; RELAXATION TIME; SILICON;

CARRIER CONCENTRATION;

EID: 34547343836     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2749728     Document Type: Article

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