Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 5, 2009, Pages 2097-2101

  Mehta, M ^a   Ruth, M ^a   Piegdon, K A ^a   Krix, D ^b   Nienhaus, H ^b   Meier, C ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE LUMINESCENCE; BASE PRESSURE; DEFECT LEVELS; DRY ETCHING PROCESS; ETCH RATES; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; METAL ORGANIC; OPTIMIZED PROCESS; PLASMA CHEMISTRIES; RADIO FREQUENCIES; SURFACE STOICHIOMETRY; ZNO; ZNO FILMS; ZNO SINGLE CRYSTALS;

AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; DRY ETCHING; HYDROGEN; INDUCTIVELY COUPLED PLASMA; LUMINESCENCE; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PROPERTIES; ORGANOMETALLICS; PLASMA DIAGNOSTICS; PLASMA ETCHING; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SINGLE CRYSTALS; STOICHIOMETRY; TRANSITION METAL COMPOUNDS; ZINC; ZINC OXIDE;

REACTIVE ION ETCHING;

EID: 70349682873     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3186528     Document Type: Article

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