SiCl 4-based reactive ion etching of ZnO and Mg xZn 1-xO films on r-sapphire substrates

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1311-1315

  Zhu, J ^a   Saraf, G ^a   Zhong, J ^a   Sheng, H F ^a   Yakshinskiy, B V ^b   Lu, Y ^a  

^a RUTGERS UNIVERSITY   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

Mg xZn 1 xO; Reactive ion etching (RIE); SiCl 4

Indexed keywords

MGXZN1-O; R-PLANE SAPPHIRE SUBSTRATES; SICL4;

ANISOTROPY; CONTAMINATION; REACTIVE ION ETCHING; SAPPHIRE; SILICON COMPOUNDS; THIN FILMS;

ZINC OXIDE;

EID: 33746211402     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0260-4     Document Type: Conference Paper

References (14)

1. A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, and H. Koinuma, Appl. Phys. Lett. 72, 2466 (1998).
2. A.K. Sharma, J. Narayan, J.F. Muth, C.W. Teng, C. Jin, A. Kvit, R.M. Kolbas, and O.W. Holland, Appl. Phys. Lett. 75, 3327 (1999).
3. W. Yang, R.D. Vispute, S. Choopun, R.P. Sharma, T. Venkatesan, and H. Shen, Appl. Phys. Lett. 78, 2787 (2001).
4. K. Koike, K. Hama, I. Nakashima, and G.-Y. Takada, J. Cryst. Growth 278, 288 (2005).
5. J.M. Lee, K.M. Chang, K.K. Kim, W.K. Choi, and S.J. Park, J. Electrochem. Soc. 148 (2001).
6. H.-K. Kim, J.W. Bae and T.-K. Kim, J. Vac. Sci. Technol. B21(4) (2003).
7. S.-C. Chang, D.B. Hicks, and R.C.O. Laugal, Solid-State Sensor and Actuator Workshop, 1992, 5th Technical Digest (Piscataway, NJ: IEEE, 1992), pp. 22-25.
8. K. Ip, K.H. Baik, M.E. Overberg, E.S. Lambers, Y.W. Heo, D.P. Norton, and S.J. Pearton, Appl. Phys. Lett. 81, 3546 (2002).
9. W.T. Lim, I.K. Baek, J.W. Lee, E.S. Lee, M.H. Jeon, and G.S. Cho, Appl. Phys. Lett. 83, 3105 (2003).
10. K. Koike, I. Nakashima, K. Hashimoto, S. Sasa, M. Inoue, and M. Yano, Appl. Phys. Lett. 87, 112106 (2005).
11. K. Ogata, T. Honden, T. Tanite, T. Komuro, K. Koike, S. Sasa, M. Inoue, and M. Yano, J. Vac. Sci. Technol. A 22, 531 (2004).
12. M. Madou, Fundamentals of Microfabrication (Boca Raton, FL: CRC Press LLC, 1997).
13. J. Zhu, N.W. Emanetoglu, Y. Chen, and Y. Lu, J. Electron. Mater. 33, 556 (2004).
14. S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, and T. Steiner, J. Vac. Sci. Technol. B22 (3) (2004).