Theoretical design of GaN/ferroelectric heterostructure: Toward a strained semiconductor on ferroelectrics

Applied Physics Letters

Volumn 95, Issue 12, 2009, Pages

  Zhang, Jihua ^a   Yang, Chuanren ^a   Wu, Song ^a   Liu, Ying ^a   Chen, Hongwei ^a   Zhang, Wanli ^a   Li, Yanrong ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HETEROJUNCTION; CARRIER DISTRIBUTIONS; CHARGE CONTROL MODEL; DEVICE STRUCTURES; DOUBLE HETEROSTRUCTURES; ELECTRONIC DEVICE; FERROELECTRIC STRUCTURE; FIRST-PRINCIPLES; GAN LAYERS; HETEROSTRUCTURES; MATERIAL PARAMETER; POWER DEVICES; SHEET ELECTRON DENSITY; SOURCE/DRAIN RESISTANCES; SWITCHABLE; THEORETICAL DESIGN; TWO CHANNEL;

ELECTRIC RESISTANCE; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICES;

HETEROJUNCTIONS;

EID: 70349653536     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3231072     Document Type: Article

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