GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1565-1567

  Ougazzaden, A ^a   Moudakir, T ^b   Aggerstam, T ^c   Orsal, G ^b   Salvestrini, J P ^b   Gautierand, S ^b   Sirenko, A A ^d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (France)

^b SUPELEC   (France)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^d NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-AXIS ORIENTATIONS; COMPRESSIVE STRAIN; FREESTANDING GAN; GAN LAYERS; GAN THIN FILMS; IN-PLANE LATTICES; MOVPE; SUBSTRATE PLANES;

GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 50849143992     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778490     Document Type: Conference Paper

References (9)

1. Y. Tsuchiya, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima, phys. stat. sol. (a) 202, R145 (2005).
2. G. Namkoong, K.-K. Lee, S. M. Madison, W. Henderson, S. E. Ralph, and W. A. Doolittle, Appl. Phys. Lett. 87, 171107 (2005).
3. P. J. Hansen, Y. Terao, Y. Wu, R. A. York, U. K. Mishra, and J. S. Speck, J. Vac. Sci. Technol. B 23(1), 162 (2005).
4. S. Ito, H. Fujioka, J. Ohta, H. Takahashi, and M. Oshima, Thin Solid Films 435, 215 (2003).
5. J. Ohta, H. Fujioka, H. Takahashi, and M. Oshima, Appl. Surf. Sci. 197/198, 486 (2002).
6. H. Takahashi, J. Ohta, H. Fujioka, M. Oshima, and M. Kimura, J. Cryst. Growth 237/239, 1158 (2002).
7. J. Ohta, H. Fujioka, S. Ito, and M. Oshima, Thin Solid Films 435, 218 (2003).
8. C. Sartel, S. Gautier, S. Ould Saad Hamady, N. Maloufi, J. Martin, A. Sirenko, and A. Ougazzaden, Superlattices Microstruct. 40, 476 (2006).
9. S. Gautier, C. Sartel, S. Ould-Saad, J. Martin, A. Sirenko, and A. Ougazzaden, J. Cryst. Growth 298, 428 (2007).