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Volumn 106, Issue 6, 2009, Pages

Influence of surface chemistry on photoluminescence from deuterium-passivated silicon nanocrystals

(6) Salivati, Navneethakrishnan a Shuall, Nimrod b Baskin, Emanuel b Garber, Valery b McCrate, Joseph M a Ekerdt, John G a

a The University of Texas at Austin (United States)

b DC Sirica Ltd (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; ATOMIC DEUTERIUM; EXCITATION WAVELENGTH; HOT WIRE CHEMICAL VAPOR DEPOSITION; NANOCRYSTAL SIZES; NANOCRYSTAL SURFACE; PEAK SHIFT; PL INTENSITY; SI NANOCRYSTAL; SILICON NANOCRYSTALS; SIO2 SURFACE; SIZE DEPENDENT; SURFACE PASSIVATION; ULTRA-HIGH VACUUM CHAMBER;

AMORPHIZATION; CAPILLARITY; DANGLING BONDS; DESORPTION; DEUTERIUM; DEUTERIUM COMPOUNDS; PASSIVATION; PHOTOLUMINESCENCE; QUANTUM CONFINEMENT; SILICON; SILICON OXIDES; SURFACE CHEMISTRY; SURFACE STRUCTURE; VACUUM; VACUUM DEPOSITION;

NANOCRYSTALS;

EID: 70349638093 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3224952 Document Type: Article

Times cited : (10)

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