Etching effect of hydrogen plasma on electron cyclotron resonance-chemical vapor deposition and its application to low temperature Si selective epitaxial growth

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 2, 1998, Pages 402-407

  Sasaki, Kimihiro ^a   Takada, Toshiaki ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

ECR plasma CVD; Etching; Hydrogen plasma; Si Selective epitaxial growth

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; ETCHING; HIGH TEMPERATURE EFFECTS; HYDROGEN; MORPHOLOGY; PLASMAS; SEMICONDUCTING SILICON;

KIKUCHI LINES;

SEMICONDUCTING FILMS;

EID: 0031997219     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.402     Document Type: Article

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