Temperature programmed desorption studies of deuterium passivated silicon nanocrystals

Surface Science

Volumn 603, Issue 8, 2009, Pages 1121-1125

  Salivati, Navneethakrishnan ^a   Ekerdt, John G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Etching; Passivation; Scanning electron microscopy; Silicon nanocrystals; Temperature programmed desorption

Indexed keywords

DANGLING BONDS; DEUTERIUM; DEUTERIUM COMPOUNDS; ETCHING; NANOCRYSTALS; PASSIVATION; SCANNING; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON COMPOUNDS;

AS-GROWN; ATOMIC DEUTERIUMS; DESORPTION SPECTRUM; EXTENDED SURFACES; NANOCRYSTAL SURFACES; SI (1 1 1); SI NANOCRYSTALS; SI(1 0 0 ); SILICON NANOCRYSTALS; ULTRA-HIGH VACUUM CHAMBERS;

TEMPERATURE PROGRAMMED DESORPTION;

EID: 63749105500     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2009.02.033     Document Type: Article

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