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Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages

The role of copper in ZnO/Cu/ZnO thin films for flexible electronics

(4) Sivaramakrishnan, K a Theodore, N D b Moulder, J F c Alford, T L a

a ARIZONA STATE UNIVERSITY (United States)

b FREESCALE SEMICONDUCTOR INC (United States)

c Physical Electronics Inc Minnesota (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BEST VALUE; BURSTEIN-MOSS SHIFT; CARRIER INJECTION; CONDUCTION MECHANISM; COPPER LAYER; COPPER THICKNESS; FIGURE OF MERIT; FLEXIBLE ELECTRONICS; HALL RESISTIVITY; HIGH CONDUCTIVITY; LONG WAVELENGTH; METAL LAYER; MULTILAYER STRUCTURES; OPTICAL TRANSMISSIONS; PEAK TRANSMITTANCE; POLE FIGURE; SCATTERING LOSS; SEED LAYER; SHORT WAVELENGTHS; ZNO;

CARRIER CONCENTRATION; COPPER; FILM PREPARATION; LIGHT TRANSMISSION; ZINC OXIDE;

COPPER OXIDES;

EID: 70349634002 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3213385 Document Type: Article

Times cited : (58)

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