Improved conductivity and mechanism of carrier transport in zinc oxide with embedded silver layer

Journal of Applied Physics

Volumn 103, Issue 1, 2008, Pages

  Han, H ^a   Theodore, N D ^b   Alford, T L ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CARRIER TRANSPORT; COMPOSITE STRUCTURES; ELECTRIC CONDUCTIVITY; FILM THICKNESS; HALL EFFECT; POLYMER FILMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

CONDUCTION MECHANISMS; IMPROVED CONDUCTANCE; LAYERED COMPOSITE STRUCTURES; TRANSPARENT CONDUCTING OXIDE STRUCTURES;

ZINC OXIDE;

EID: 38149043508     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2829788     Document Type: Article

References (23)

1. H. Han, D. Adams, J. W. Mayer, and T. L. Alford, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2106013 98, 083705 (2005).
2. V. Bhosle, J. T. Prater, F. Yang, D. Burk, S. R. Forrest, and J. Narayan, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2750410 102, 023501 (2007).
3. K.-H. Kim, K.-C. Park, and D.-Y. Ma, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.365556 81, 7764 (1997).
4. J. Hu and R. G. Gordorn, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.351309 71, 880 (1992).
5. A. V. Singh, R. M. Mehra, N. Buthrath, A. Wakahara, and A. Yoshida, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1415544 90, 5661 (2001).
6. J.-M. Ting and C.-K. Lin, J. Am. Ceram. Soc. JACTAW 0002-7820 10.1111/j.1551-2916.2006.01316.x 89, 3676 (2006).
7. H. Kim, C. M. Gilmore, J. S. Horwitz, A. Pique, H. Murata, G. P. Kushto, R. Schlaf, Z. H. Kafafi, and D. B. Chrisey, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125740 76, 259 (2000).
8. H. Han, Y. Zoo, S. K. Bhagat, J. Lewis, and T. L. Alford, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2783952 102, 063710 (2007).
9. E. J. J. Martin, Y. Yan, M. Lane, J. Ireland, C. R. Kannewurf, and R. P. H. Chang, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2004.01.103 461, 309 (2004).
10. J. Lewis, S. Grego, B. Chalamala, E. Vick, and D. Temple, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1806559 85, 3450 (2000).
11. D. R. Sahu and J.-L. Huang, Thin Solid Films THSFAP 0040-6090 515, 876 (2006).
12. D. R. Sahu, S.-Y. Lin, and J.-L. Huang, Appl. Surf. Sci. ASUSEE 0169-4332 252, 7509 (2006).
13. L. R. Doolittle, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/0168-583X(85)90762-1 9, 344 (1985).
14. A. G. Milnes and D. L. Feucht, Heterojunciton and Metal-Semiconductor Junctions (Academic, New York, 1972).
15. H. K. Yadav, K. Sreenivas, and V. Gupta, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2733628 90, 172113 (2007).
16. T. Adersson and C. G. Granqvist, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.323851 48, 1673 (1977).
17. G. Jeffers, M. A. Dubson, and P. M. Duxbury, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.355742 75, 5016 (1994).
18. J. Lewis, S. Grego, B. Chalamala, E. Vick, and D. Temple, " Electromechanics of a Highly Flexible Transparent Conductor for Display Applications.," 47th Annual Technical Conference Proceedings of the Society of Vacuum Coaters, Dallas, TX, 2004, p. 129.
19. M. Fahland, P. Karlsson, and C. Charton, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(01)01053-7 392, 334 (2001).
20. H. Han, J. W. Mayer, and T. L. Alford, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2357647 100, 083715 (2006).
21. A. P. Roth, J. B. Webb, and D. F. Williams, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.25.7836 25, 7836 (1982).
22. B. E. Sernelius, K.-F. Berggren, Z.-C. Jin, I. Hamberg, and C. G. Granqvist, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.37.10244 37, 10244 (1988).
23. H. J. Kim and Y. R. Park, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1342042 78, 475 (2001).